爾利效應

现象

• 由於基区变得更窄，电子与空穴复合的可能性更小。
• 若穿过基区的电荷梯度增加，那么注入基区的少子电流会增加。

大信号模型

${\displaystyle I_{\mathrm {C} }=I_{\mathrm {S} }e^{\frac {V_{\mathrm {BE} }}{V_{\mathrm {T} }}}\left(1+{\frac {V_{\mathrm {CE} }}{V_{\mathrm {A} }}}\right)}$
${\displaystyle \beta _{\mathrm {F} }=\beta _{\mathrm {F0} }\left(1+{\frac {V_{\mathrm {CE} }}{V_{\mathrm {A} }}}\right)}$

• ${\displaystyle V_{\mathrm {CE} }}$是集电极－发射极电压
• ${\displaystyle V_{\mathrm {T} }}$热电压${\displaystyle \mathrm {kT/q} }$
• ${\displaystyle V_{\mathrm {A} }}$厄利电压（一般为15 V－150 V，对於小型设备会更小）
• ${\displaystyle \beta _{\mathrm {F0} }}$是零偏压时的正向共射极电流放大系数

小信号模型

${\displaystyle r_{O}={\frac {V_{A}+V_{CE}}{I_{C}}}\ \approx {\frac {V_{A}}{I_{C}}}\ }$

${\displaystyle r_{O}={\frac {V_{A}+V_{CB}}{I_{C}}}\ }$

${\displaystyle r_{O}={\begin{matrix}{\frac {1+\lambda V_{DS}}{\lambda I_{D}}}\end{matrix}}={\begin{matrix}{\frac {1/\lambda +V_{DS}}{I_{D}}}\end{matrix}}}$,

参考文献

1. ^ R.C. Jaeger and T.N. Blalock. Microelectronic Circuit Design. McGraw-Hill Professional. 2004: 317 [2010-08-13]. ISBN 0072505036. （原始内容存档于2012-11-13）.
2. ^ Massimo Alioto and Gaetano Palumbo. Model and Design of Bipolar and Mos Current-Mode Logic: CML, ECL and SCL Digital Circuits. Springer. 2005 [2010-08-13]. ISBN 1402028784. （原始内容存档于2012-11-13）.
3. ^ Paolo Antognetti and Giuseppe Massobrio. Semiconductor Device Modeling with Spice. McGraw-Hill Professional. 1993 [2010-08-13]. ISBN 0071349553. （原始内容存档于2012-11-13）.
4. ^ Orcad PSpice Reference Manual named PSpcRef.pdf页面存档备份，存于互联网档案馆）, p. 209. This manual is included with the free version of Orcad PSpice, but they do not maintain a copy on line. If the link given here expires, try Googling PSpcRef.pdf.
5. ^ R.C. Jaeger and T.N. Blalock. Microelectronic Circuit Design Second Edition. McGraw-Hill Professional. 2004: Eq. 13.31, p. 891 [2010-08-13]. ISBN 0-07-232099-0. （原始内容存档于2009-02-28）.
6. ^ NanoDotTek Report NDT14-08-2007, 12 August 2007 存档副本 (PDF). [2015-03-23]. （原始内容 (PDF)存档于2012-06-17）.