二硒化锝:修订间差异
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| CrystalStruct = [[氢氧化镉|Cd(OH)<sub>2</sub>]]<ref>{{cite book | author = |
| CrystalStruct = 三斜([[氢氧化镉|Cd(OH)<sub>2</sub>]])<ref>{{cite book | author = R.M.A. Lieth | date = 29 June 2013 | title = Preparation and Crystal Growth of Materials with Layered Structures | publisher = Springer Science & Business Media | pages = 216 | isbn = 9789401727501 | url = https://books.google.com/books?id=WBYACQAAQBAJ&pg=PA216}}</ref> |
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'''二硒化锝'''是一种[[无机化合物]],化学式为TcSe<sub>2</sub>。它可由[[硒]]和[[锝]]在高温反应得到。<ref name=jlcm>{{cite doi|10.1016/0022-5088(71)90168-8}}</ref>它是一种[[半导体]],根据HSE06计算,块材的1T<sup>dp</sup>相的间接带隙为1.01 eV,单层材料增大至1.64 eV。<ref>{{cite doi|10.1021/acsaem.2c01170}}</ref> |
'''二硒化锝'''是一种[[无机化合物]],化学式为TcSe<sub>2</sub>。它可由[[硒]]和[[锝]]在高温反应得到。<ref name=jlcm>{{cite doi|10.1016/0022-5088(71)90168-8}}</ref>它是一种[[半导体]],根据HSE06计算,块材的1T<sup>dp</sup>相的间接带隙为1.01 eV,单层材料增大至1.64 eV。<ref>{{cite doi|10.1021/acsaem.2c01170}}</ref>它可用作光解水的催化剂。<ref>{{cite book | author = Inamuddin | date = 5 April 2020 | title = Photoelectrochemical Water Splitting | publisher = Materials Research Forum LLC | pages = 12– | isbn = 978-1-64490-072-7 | url = https://books.google.com/books?id=ALfZDwAAQBAJ&pg=PA12}}</ref> |
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==参考文献== |
==参考文献== |
2022年10月12日 (三) 09:05的版本
二硒化锝 | |
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识别 | |
CAS号 | 34312-51-1(99Tc) |
性质 | |
化学式 | TcSe2 |
摩尔质量 | 256.83 g·mol⁻¹ |
结构 | |
晶体结构 | 三斜(Cd(OH)2)[1] |
若非注明,所有数据均出自标准状态(25 ℃,100 kPa)下。 |
二硒化锝是一种无机化合物,化学式为TcSe2。它可由硒和锝在高温反应得到。[2]它是一种半导体,根据HSE06计算,块材的1Tdp相的间接带隙为1.01 eV,单层材料增大至1.64 eV。[3]它可用作光解水的催化剂。[4]
参考文献
- ^ R.M.A. Lieth. Preparation and Crystal Growth of Materials with Layered Structures. Springer Science & Business Media. 29 June 2013: 216. ISBN 9789401727501.
- ^ doi:10.1016/0022-5088(71)90168-8
{{cite doi}}已停用,请参见{{cite journal}}。 - ^ doi:10.1021/acsaem.2c01170
{{cite doi}}已停用,请参见{{cite journal}}。 - ^ Inamuddin. Photoelectrochemical Water Splitting. Materials Research Forum LLC. 5 April 2020: 12–. ISBN 978-1-64490-072-7.
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