红外检测器

红外探测器是对红外(IR)辐射做出反应的探测器。探测器的两种主要类型是热探测器和光子探测器（光电探测器）。

可以通过许多与温度相关的现象来跟踪入射红外辐射的热效应。 ^[2]测辐射热计和微测辐射热计基于电阻的变化。热电偶和热电堆利用热电效应。格雷细胞遵循热膨胀。在红外光谱仪中，热释电探测器应用最广泛。

光子探测器的响应时间和灵敏度可能要高得多，但通常必须对其进行冷却以减少热噪声。其中的材料是具有窄带隙的半导体。入射的红外光子可以引起电子激发。在光电导探测器中，监控探测器元件的电阻率。光伏探测器包含一个pn 结，在光照下其上会出现光电电流。

红外探测器通过将其连接到带有铟凸块的读出集成电路而实现混合。这种混合被称为焦平面阵列。

探测器材料基础

窄带隙半导体为各种红外探测器材的材料基础，包括铋、锑、铟、镉、硒等元素的化合物及合金。^[3]^[4] 尖端高频功能性红外器件的研发常基于窄带隙的纳米材料。纳米窄带半导体中，量子限制效应和电子-空穴耦合存在相互作用，致使描述和设计常面临诸多挑战。^[5] “兰克斯模型（英语：Benjamin Lax）”将k·p 方法拓展到了非抛物线性的能带边结构，常用于处理红外范围内的电子光学。^[6] 利用密度泛函理论的第一性原理超级计算，被用以了解精确的能带曲率和对应的光电子密度，但对算力和算时要求甚高。研发者亦常采用"唐-崔瑟豪斯理论" ^[7]^[8] 的低维多带迭代法来解决此问题。^[9]^[10]

硫化铅(PbS)
碲化汞镉（称为MCT、HgCdTe）
锑化铟(InSb)
砷化铟
砷化铟镓
硒化铅
QWIP
钽酸锂（LiTaO3）
硫酸三甘氨酸(TGS)
硅化铂（PtSi）

也可以看看

红外成像

参考

^ Revolutionary New High-speed Infrared Detector Sees First Light. [15 June 2015].
^ Avraham, M.; Nemirovsky, J.; Blank, T.; Golan, G.; Nemirovsky, Y. Toward an Accurate IR Remote Sensing of Body Temperature Radiometer Based on a Novel IR Sensing System Dubbed Digital TMOS. Micromachines. 2022, 13 (5). doi:10.3390/mi13050703 .
^ Li, Xiao-Hui. Narrwo-Bandgap Materials for Optoelectronics Applications. Frontiers of Physics. 2022, 17: 13304 [2023-08-04]. doi:10.1007/s11467-021-1055-z. （原始内容存档于2023-08-04）.
^ Chu, Junhao; Sher, Arden. Physics and Properties of Narrow Gap Semiconductors. Springer. [2023-08-04]. ISBN 9780387747439. （原始内容存档于2023-08-04）.
^ Non-Parabolic Model for the Solution of 2-D Quantum Transverse States Applied to Narrow Conduction Channel Simulation. Springer. 2006 [2023-08-04]. （原始内容存档于2023-08-04）.
^ Zawadzki, Wlodzimierz; Lax, Benjamin. Two-Band Model for Bloch Electrons in Crossed Electric and Magnetic Fields. Physical Review Letters. 1966, 16: 1001 [2023-08-04]. doi:10.1103/PhysRevLett.16.1001. （原始内容存档于2023-08-04）.
^ Tang, Shuang; Mildred, Dresselhaus. Phase diagrams of BiSb thin films with different growth orientations. Physical Review B. 2012, 86 (7): 075436 [2023-08-04]. doi:10.1103/PhysRevB.86.075436. （原始内容存档于2023-06-19）.
^ Tang, Shuang; Mildred, Dresselhaus. Electronic phases, band gaps, and band overlaps of bismuth antimony nanowires. Physical Review B. 2014, 89 (4): 045424 [2023-08-04]. doi:10.1103/PhysRevB.89.045424. （原始内容存档于2023-06-19）.
^ Heremans, Joseph. Electronic Properties of Nano-Structured Bismuth-Antimony Materials. Physical Review Letters. 2002, 88: 216801 [2023-08-04]. doi:10.1103/PhysRevLett.88.216801. （原始内容存档于2023-08-04）.
^ Joesph Heremans. Thermoelectrics Born Again. 2018-04-09 [2023-08-04]. （原始内容存档于2023-08-04）.

[1] Revolutionary New High-speed Infrared Detector Sees First Light. [15 June 2015].

[SC-2] Avraham, M.; Nemirovsky, J.; Blank, T.; Golan, G.; Nemirovsky, Y. Toward an Accurate IR Remote Sensing of Body Temperature Radiometer Based on a Novel IR Sensing System Dubbed Digital TMOS. Micromachines. 2022, 13 (5). doi:10.3390/mi13050703 .

[3] Li, Xiao-Hui. Narrwo-Bandgap Materials for Optoelectronics Applications. Frontiers of Physics. 2022, 17: 13304 [2023-08-04]. doi:10.1007/s11467-021-1055-z. （原始内容存档于2023-08-04）.

[4] Chu, Junhao; Sher, Arden. Physics and Properties of Narrow Gap Semiconductors. Springer. [2023-08-04]. ISBN 9780387747439. （原始内容存档于2023-08-04）.

[5] Non-Parabolic Model for the Solution of 2-D Quantum Transverse States Applied to Narrow Conduction Channel Simulation. Springer. 2006 [2023-08-04]. （原始内容存档于2023-08-04）.

[6] Zawadzki, Wlodzimierz; Lax, Benjamin. Two-Band Model for Bloch Electrons in Crossed Electric and Magnetic Fields. Physical Review Letters. 1966, 16: 1001 [2023-08-04]. doi:10.1103/PhysRevLett.16.1001. （原始内容存档于2023-08-04）.

[7] Tang, Shuang; Mildred, Dresselhaus. Phase diagrams of BiSb thin films with different growth orientations. Physical Review B. 2012, 86 (7): 075436 [2023-08-04]. doi:10.1103/PhysRevB.86.075436. （原始内容存档于2023-06-19）.

[8] Tang, Shuang; Mildred, Dresselhaus. Electronic phases, band gaps, and band overlaps of bismuth antimony nanowires. Physical Review B. 2014, 89 (4): 045424 [2023-08-04]. doi:10.1103/PhysRevB.89.045424. （原始内容存档于2023-06-19）.

[9] Heremans, Joseph. Electronic Properties of Nano-Structured Bismuth-Antimony Materials. Physical Review Letters. 2002, 88: 216801 [2023-08-04]. doi:10.1103/PhysRevLett.88.216801. （原始内容存档于2023-08-04）.

[10] Joesph Heremans. Thermoelectrics Born Again. 2018-04-09 [2023-08-04]. （原始内容存档于2023-08-04）.

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