二硫化铪

二硫化铪
	IUPAC名; Hafnium disulfide
别名	硫化铪; 硫化铪(IV)
识别
CAS号	18855-94-2
PubChem	101811522
ChemSpider	8374205
SMILES	S=[Hf]=S;
性质
化学式	HfS2
摩尔质量	246.62 g/mol g·mol⁻¹
外观	棕色固体
密度	6.03 g/cm3
能隙	~1.8 eV (indirect) eV
结构
晶体结构	hP3, P3m1, No 164
晶格常数	a = 0.363 nm, c = 0.584 nm
相关物质
其他阴离子	二氧化铪
其他阳离子	二硫化钨; 二硫化钼
	若非注明，所有数据均出自标准状态（25 ℃，100 kPa）下。

二硫化铪是一种无机化合物，化学式为HfS₂，是一种层状的二硫化物。通过胶带法（参见石墨烯的制备）可以将其剥离数个原子层的厚度，用于制造场效应晶体管。^[4]液相剥离法也可高产率地得到HfS₂薄片。^[5]它可由硫化氢和氧化铪在500–1300 °C反应得到。^[6]

HfO₂+2 H₂S→HfS₂+H₂O

参考文献[编辑]

^ ^1.0 ^1.1 Haynes, William M. CRC handbook of chemistry and physics: a ready-reference book of chemical and physical data 92nd. Boca Raton, FL.: CRC Press（英语：CRC Press）. 2011: 4.66. ISBN 978-1-4398-5511-9. OCLC 730008390 （英语）.
^ Terashima, K.; Imai, I. Indirect absorption edge of ZrS₂ and HfS₂. Solid State Communications. 1987-07-XX, 63 (4): 315–318 [2021-04-27]. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1. （原始内容存档于2019-08-26）（英语）. 请检查|date=中的日期值 (帮助)
^ Hodul, David T.; Stacy, Angelica M. Anomalies in the properties of Hf(S_2−xTe_x)_1-y and Hf(Se_2−xTe_x)_1-y near the metal-insulator transition. Journal of Solid State Chemistry. 1984-10-XX, 54 (3): 438–446 [2021-04-27]. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2. （原始内容存档于2019-08-26）（英语）. 请检查|date=中的日期值 (帮助)
^ Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki. Few-layer HfS₂ transistors. Scientific Reports. 2016-04-XX, 6 (1): 22277 [2021-04-27]. Bibcode:2016NatSR...622277K. ISSN 2045-2322. PMC 4772098 . PMID 26926098. doi:10.1038/srep22277. （原始内容存档于2017-01-11）（英语）. 请检查|date=中的日期值 (帮助)
^ Kaur, Harneet; Yadav, Sandeep; Srivastava, Avanish K.; Singh, Nidhi; Rath, Shyama; Schneider, Jörg J.; Sinha, Om P.; Srivastava, Ritu. High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide. Nano Research. 2018-01-XX, 11 (1): 343–353. ISSN 1998-0124. arXiv:1611.00895 . doi:10.1007/s12274-017-1636-x （英语）. 请检查|date=中的日期值 (帮助)
^ Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. Manufacture of zirconium and hafnium sulfide powders. Soviet Powder Metallurgy and Metal Ceramics. 1973-07-01, 12 (7): 521–524. ISSN 1573-9066. doi:10.1007/BF00796747 （英语）.

[b92-1] 1.0 ^1.1 Haynes, William M. CRC handbook of chemistry and physics: a ready-reference book of chemical and physical data 92nd. Boca Raton, FL.: CRC Press（英语：CRC Press）. 2011: 4.66. ISBN 978-1-4398-5511-9. OCLC 730008390 （英语）.

[2] Terashima, K.; Imai, I. Indirect absorption edge of ZrS₂ and HfS₂. Solid State Communications. 1987-07-XX, 63 (4): 315–318 [2021-04-27]. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1. （原始内容存档于2019-08-26）（英语）. 请检查|date=中的日期值 (帮助)

[str-3] Hodul, David T.; Stacy, Angelica M. Anomalies in the properties of Hf(S_2−xTe_x)_1-y and Hf(Se_2−xTe_x)_1-y near the metal-insulator transition. Journal of Solid State Chemistry. 1984-10-XX, 54 (3): 438–446 [2021-04-27]. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2. （原始内容存档于2019-08-26）（英语）. 请检查|date=中的日期值 (帮助)

[4] Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki. Few-layer HfS₂ transistors. Scientific Reports. 2016-04-XX, 6 (1): 22277 [2021-04-27]. Bibcode:2016NatSR...622277K. ISSN 2045-2322. PMC 4772098 . PMID 26926098. doi:10.1038/srep22277. （原始内容存档于2017-01-11）（英语）. 请检查|date=中的日期值 (帮助)

[5] Kaur, Harneet; Yadav, Sandeep; Srivastava, Avanish K.; Singh, Nidhi; Rath, Shyama; Schneider, Jörg J.; Sinha, Om P.; Srivastava, Ritu. High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide. Nano Research. 2018-01-XX, 11 (1): 343–353. ISSN 1998-0124. arXiv:1611.00895 . doi:10.1007/s12274-017-1636-x （英语）. 请检查|date=中的日期值 (帮助)

[6] Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. Manufacture of zirconium and hafnium sulfide powders. Soviet Powder Metallurgy and Metal Ceramics. 1973-07-01, 12 (7): 521–524. ISSN 1573-9066. doi:10.1007/BF00796747 （英语）.

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