半导体材料
外观
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半导体材料是一类固体材料,其导电性介于导体和绝缘体之间,属于半导体。
发展
[编辑]- 1833年,英国的法拉第发现硫化银是半导体材料,因为它的电阻随着温度上升而降低。
- 1874年,德国的布劳恩注意到硫化物的电导率与所加电压的方向有关,这就是半导体的整流作用。
- 1947年12月23日,巴丁与布拉坦进一步使用点接触晶体管制作出一个语音放大器,晶体管正式发明。
- 1958年9月12日,美国的基尔比,细心地切了一块锗作为电阻,再用一块pn接面做为电容,制造出一个震荡器电路。
分类
[编辑]以原料分为:
- 元素半导体材料:以单一元素组成的半导体,属于这一材料的有硼、金刚石、锗、硅、灰锡、锑、硒、碲等,其中以锗、硅、锡研究较早,制备工艺相对成熟。
- 复合半导体材料:由两种或两种以上无机物化合成的半导体,种类繁多,已知的二元化合物就有数百种。
- 有机半导体:同时是有机物质的半导体。
列表
[编辑]族 | 元素 | 化学式 | 能隙 (eV) | 直接带隙和间接带隙 | |
---|---|---|---|---|---|
IV | 1 | 硅 | Si | 1.12[1][2] | 间接带隙 |
IV | 1 | Germanium | Ge | 0.67[1][2] | 间接带隙 |
IV | 1 | Material properties of diamond | C | 5.47[1][2] | 间接带隙 |
IV | 1 | 锡, α-Sn | Sn | 0[3][4] | 半金属 (能带理论) |
IV | 2 | 碳化硅, 3C-SiC | SiC | 2.3[1] | 间接带隙 |
IV | 2 | 碳化硅, 4H-SiC | SiC | 3.3[1] | 间接带隙 |
IV | 2 | 碳化硅, 6H-SiC | SiC | 3.0[1] | 间接带隙 |
VI | 1 | 硫, 硫的同素异形体 | S8 | 2.6[5] | |
VI | 1 | 硒 | Se | 1.83 - 2.0[6] | 间接带隙 |
VI | 1 | 硒 | Se | 2.05 | 间接带隙 |
VI | 1 | 碲 | Te | 0.33[7] | |
III-V | 2 | 氮化硼, cubic | BN | 6.36[8] | 间接带隙 |
III-V | 2 | 氮化硼, hexagonal | BN | 5.96[8] | quasi-direct |
III-V | 2 | 氮化硼 | BN | 5.5[9] | |
III-V | 2 | 磷化硼 | BP | 2.1[10] | 间接带隙 |
III-V | 2 | 砷化硼 | BAs | 1.82 | 直接带隙 |
III-V | 2 | 砷化硼 | B12As2 | 3.47 | 间接带隙 |
III-V | 2 | 氮化铝 | AlN | 6.28[1] | 直接带隙 |
III-V | 2 | 磷化铝 | AlP | 2.45[2] | 间接带隙 |
III-V | 2 | 砷化铝 | AlAs | 2.16[2] | 间接带隙 |
III-V | 2 | 锑化铝 | AlSb | 1.6/2.2[2] | 直接带隙/direct |
III-V | 2 | 氮化镓 | GaN | 3.44[1][2] | 直接带隙 |
III-V | 2 | 磷化镓 | GaP | 2.26[1][2] | 间接带隙 |
III-V | 2 | Gallium arsenide | GaAs | 1.42[1][2] | 直接带隙 |
III-V | 2 | 锑化镓 | GaSb | 0.73[1][2] | 直接带隙 |
III-V | 2 | 氮化铟 | InN | 0.7[1] | 直接带隙 |
III-V | 2 | 磷化铟 | InP | 1.35[1] | 直接带隙 |
III-V | 2 | 砷化铟 | InAs | 0.36[1] | 直接带隙 |
III-V | 2 | 锑化铟 | InSb | 0.17[1] | 直接带隙 |
II-VI | 2 | 硒化镉 | CdSe | 1.74[2] | 直接带隙 |
II-VI | 2 | 硫化镉 | CdS | 2.42[2] | 直接带隙 |
II-VI | 2 | 碲化镉 | CdTe | 1.49[2] | 直接带隙 |
II-VI | 2 | 氧化锌 | ZnO | 3.37[2] | 直接带隙 |
II-VI | 2 | 硒化锌 | ZnSe | 2.7[2] | 直接带隙 |
II-VI | 2 | 硫化锌 | ZnS | 3.54/3.91[2] | 直接带隙 |
II-VI | 2 | 碲化锌 | ZnTe | 2.3[2] | 直接带隙 |
I-VII | 2 | 氯化亚铜 | CuCl | 3.4[11] | 直接带隙 |
I-VI | 2 | Copper sulfide | Cu2S | 1.2[10] | 间接带隙 |
IV-VI | 2 | 硒化铅 | PbSe | 0.26[7] | 直接带隙 |
IV-VI | 2 | 硫化铅 | PbS | 0.37[12] | |
IV-VI | 2 | 碲化铅 | PbTe | 0.32[1] | |
IV-VI | 2 | 硫化亚锡 | SnS | 1.3/1.0[13] | 直接带隙/间接带隙 |
IV-VI | 2 | 二硫化锡 | SnS2 | 2.2[14] | |
IV-VI | 2 | 碲化亚锡 | SnTe | 0.18 | |
IV-VI | 3 | Lead tin telluride | Pb1−xSnxTe | 0-0.29 | |
V-VI | 2 | 碲化铋 | Bi2Te3 | 0.13[1] | |
II-V | 2 | 磷化镉 | Cd3P2 | 0.5[15] | |
II-V | 2 | 砷化镉 | Cd3As2 | 0 | |
II-V | 2 | 磷化锌 | Zn3P2 | 1.5[16] | 直接带隙 |
II-V | 2 | 二磷化锌 | ZnP2 | 2.1[17] | |
II-V | 2 | 砷化锌 | Zn3As2 | 1.0[18] | |
II-V | 2 | 锑化锌 | Zn3Sb2 | ||
氧 | 2 | 二氧化钛, 锐钛矿 | TiO2 | 3.20[19] | 间接带隙 |
氧 | 2 | 二氧化钛, 金红石 | TiO2 | 3.0[19] | 直接带隙 |
氧 | 2 | 二氧化钛, 板钛矿 | TiO2 | 3.26[19] | |
氧 | 2 | 氧化亚铜 | Cu2O | 2.17[20] | |
氧 | 2 | 氧化铜 | CuO | 1.2 | |
氧 | 2 | 二氧化铀 | UO2 | 1.3 | |
氧 | 2 | 二氧化锡 | SnO2 | 3.7 | |
氧 | 3 | 钛酸钡 | BaTiO3 | 3 | |
氧 | 3 | 钛酸锶 | SrTiO3 | 3.3 | |
氧 | 3 | 铌酸锂 | LiNbO3 | 4 | |
V-VI | 2 | monoclinic 二氧化钒 | VO2 | 0.7[21] | 光学带隙 |
2 | 碘化铅 | PbI2 | 2.4[22] | ||
2 | 二硫化钼 | MoS2 | 1.23 eV (2H)[23] | 间接带隙 | |
2 | Gallium(II) selenide | GaSe | 2.1 | 间接带隙 | |
2 | 硒化铟 | InSe | 1.26-2.35 eV[24] | 直接带隙 (2D间接带隙) | |
2 | 硫化亚锡 | SnS | >1.5 eV | 直接带隙 | |
2 | 硫化铋 | Bi2S3 | 1.3[1] | ||
Magnetic, diluted (DMS)[25] | 3 | Gallium manganese arsenide | GaMnAs | ||
Magnetic, diluted (DMS) | 3 | Lead manganese telluride | PbMnTe | ||
4 | Lanthanum calcium manganate | La0.7Ca0.3MnO3 | |||
2 | 氧化亚铁 | FeO | 2.2 [26] | ||
2 | 一氧化镍 | NiO | 3.6–4.0 | 直接带隙[27][28] | |
2 | Europium(II) oxide | EuO | |||
2 | 硫化亚铕 | EuS | |||
2 | 溴化铬 | CrBr3 | |||
其它 | 3 | Copper indium selenide, CIS | CuInSe2 | 1 | 直接带隙 |
其它 | 3 | Silver gallium sulfide | AgGaS2 | ||
其它 | 3 | Zinc silicon phosphide | ZnSiP2 | 2.0[10] | |
其它 | 2 | 三硫化二砷 雌黄 | As2S3 | 2.7[29] | 直接带隙 |
其它 | 2 | 硫化砷 雄黄 | As4S4 | ||
其它 | 2 | Platinum silicide | PtSi | ||
其它 | 2 | 碘化铋 | BiI3 | ||
其它 | 2 | 碘化汞 | HgI2 | ||
其它 | 2 | 溴化亚铊 | TlBr | 2.68[30] | |
其它 | 2 | 硫化银 | Ag2S | 0.9[31] | |
其它 | 2 | Iron disulfide | FeS2 | 0.95[32] | |
其它 | 4 | Copper zinc tin sulfide, CZTS | Cu2ZnSnS4 | 1.49 | 直接带隙 |
其它 | 4 | Copper zinc antimony sulfide, CZAS | Cu1.18Zn0.40Sb1.90S7.2 | 2.2[33] | 直接带隙 |
其它 | 3 | Copper tin sulfide, CTS | Cu2SnS3 | 0.91[10] | 直接带隙 |
合金表
[编辑]参见
[编辑]参考文献
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